Thermally enhanced electronic flip-chip packaging with external-connector-side die and method

ABSTRACT

A method and apparatus for making a package having improved heat conduction characteristics and high frequency response. A relatively thick package substrate, such as copper, has a wiring layer bonded to one face, leaving the opposite face exposed, for example, to be a surface for connection to a heat sink. One or more chips are bonded to the wiring layer, and an array of connectors, such as solder balls are provided around the periphery of the chip(s) for connection to a printed circuit board. In some embodiments, the printed circuit board has a hole that the chip(s) extend into to allow smaller external-connection solder balls. In some embodiments, a second heat sink is connected to the back of the chip through the PCB hole.

This application is a Divisional of U.S. application Ser. No.11/839,120, filed Aug. 15, 2007, which is a Divisional of U.S.application Ser. No. 10/382,680, filed on Mar. 5, 2003, now issued asU.S. Pat. No. 7,268,425. These applications are incorporated in theirentirety herein by reference.

FIELD OF THE INVENTION

This invention relates to the field of electronic package fabrication,and more specifically to a method and apparatus of making a thermallyenhanced electronic flip-chip/solder-ball package with a chip die beingon the same side of the package as the external-connectors.

BACKGROUND OF THE INVENTION

Bare electronic chips typically need to be packaged in a package thatprovides an electric circuit to each electrical connection of the chipand to an external connector such as a pin or a ball. Typical is apin-grid array package having relatively large pins on one side forexternal connections, and pads on an opposite side for connections to aball-grid-array set of connections to the electronic chip (such as aprocessor or memory chip). Also typical is a ball-grid array packagehaving relatively large balls (e.g., in a ball-grid array) withrelatively large spacings on one side of the package for externalconnections, and small closely spaced pads on the same side forconnections to a ball-grid-array set of connections to the electronicchip (such as a processor or memory chip).

Such a package typically has a non-conductive substrate (such as aplastic film or layer) with conductive traces (wires) on or in a surfaceof the substrate. Some packages include multiple chips, such as one ormore logic or processor chips, and/or one or more memory chips, such asa FLASH-type reprogrammable non-volatile memory. Balls and/or pins areattached to the outside of the package, and one or more electronic chipsare attached, for example, by also using ball-grid-array connectionmethods and/or flying-wire methods. Optionally, a cover or encapsulantis used to enclose the chip or chips.

One conventional way to make such a package is to start with a sheet orstrip of non-conductive material such as Mylar film or a fiberglassreinforced epoxy substrate, then deposit a film of metal such as copper,then pattern and etch the metal to leave traces. Sometimes, through-holevias connect traces on one side or internal layer to traces on the otherside or another internal layer. The chips are then connected to pads onthe traces and sometimes encapsulated to form the package. Suchpackaging typically has poor thermal conductivity.

Chips that run at extremely high frequencies, e.g., upwards of 40gigahertz, also have constraints as to the type, thickness, spacing, andlayout of traces required to provide adequate signal capability.Further, such chips typically need to be run at very low voltages (e.g.,about one volt) and very high currents (e.g., one hundred amps), whichmust be provided in order to achieve the desired high frequencies.

What is needed is a simple, inexpensive, reliable method and apparatusto fabricate packages for electronic chips, so that the package provideshigh heat conductivity and dissipation, and high frequency response.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective cut-away schematic view of anexternal-connector-side package 100.

FIG. 2 is a perspective cut-away schematic view of a ball-side-diepackage 200.

FIG. 3 is a perspective cut-away schematic view of a ball-side-diepackage 300 in an apparatus 380 having attached heat sinks.

FIG. 4 is a cut-away schematic view of an external-connector-side diepackage 400 having pins.

FIG. 5 is a cut-away schematic view of an external-connector-sidepackage 500 having pads.

FIG. 6 is a cut-away schematic view of a ball-side-die package 600having balls.

FIG. 7A is a cut-away schematic view of a ball-side-die package 700.

FIG. 7B is a top view of a sheet 701 to be cut into a plurality ofball-side-die packages 700′.

FIG. 7C is a top view of a sheet 702 to be cut into a plurality ofball-side-die packages 700.

FIG. 8A is a cut-away schematic view of a ball-side-die package 800.

FIG. 8B is a top view of a sheet 801 to be cut into a plurality ofball-side-die packages 800′.

FIG. 8C is a top view of a sheet 802 to be cut into a plurality ofball-side-die packages 800.

FIG. 9 is a schematic view of a machine 900 that performs a method ofthe invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings that form a part hereof,and in which are shown by way of illustration specific embodiments inwhich the invention may be practiced. It is understood that otherembodiments may be utilized and structural changes may be made withoutdeparting from the scope of the present invention.

The leading digit(s) of reference numbers appearing in the Figuresgenerally corresponds to the Figure number in which that component isfirst introduced, such that the same reference number is used throughoutto refer to an identical component which appears in multiple Figures.The same reference number or label may refer to signals and connections,and the actual meaning will be clear from its use in the context of thedescription.

Terminology

The terms chip, die, integrated circuit, monolithic device,semiconductor device, and microelectronic device, are usedinterchangeably in this description.

The terms metal line, trace, wire, conductor, signal path and signalingmedium are all related. The related terms listed above, are generallyinterchangeable, and appear in order from specific to general. In thisfield, metal lines are sometimes referred to as traces, wires, lines,interconnect or simply metal.

Metal lines, generally copper (Cu) or an alloy of Cu and another metalsuch as nickel (Ni), aluminum (Al), titanium (Ti), molybdenum (Mo), orstacked layers of different metals, alloys or other combinations, areconductors that provide signal paths for coupling or interconnecting,electrical circuitry. Conductors other than metal are available inmicroelectronic devices. Materials such as doped polysilicon, dopedsingle-crystal silicon (often referred to simply as diffusion,regardless of whether such doping is achieved by thermal diffusion orion implantation), titanium (Ti), molybdenum (Mo), and refractory metalsilicides are examples of other conductors.

In this description, the term metal applies both to substantially puresingle metallic elements and to alloys or combinations of two or moreelements, at least one of which is a metallic element.

The term substrate or core generally refers to the physical object thatis the basic workpiece that is transformed by various process operationsinto the desired microelectronic configuration. Substrates may includeconducting material (such as copper or aluminum), insulating material(such as sapphire, ceramic, or plastic), semiconducting materials (suchas silicon), non-semiconducting, or combinations of semiconducting andnon-semiconducting materials, or other combinations of some of the abovematerials. In some embodiments, substrates include layered structures,such as a core sheet or piece of material (such as iron-nickel alloy)chosen for its a coefficient of thermal expansion (CTE) that moreclosely matches the CTE of an adjacent structure such as a siliconprocessor chip. In some embodiments, such a substrate core is laminatedto a sheet of material chosen for electrical and/or thermal conductivity(such as a copper or aluminum alloy), which in turn is covered with alayer of plastic chosen for electrical insulation, stability, andembossing characteristics. In some embodiments, the plastic has wiringtraces deposited in one or more layers separated by insulator materialsuch as plastic.

The term vertical is defined to mean substantially perpendicular to themajor surface of a substrate. Height or depth refers to a distance in adirection perpendicular to the major surface of a substrate.

FIG. 1 is a perspective cut-away schematic view of anexternal-connector-side-die package 100. Package 100 includes athermally conductive core 120 having a first face 121 to which anelectrically insulating layer 110 (having wiring traces) is attached,and a second face 122, which is exposed. In some embodiments, core 120is made of a metal such as a uniform sheet of copper or a copper alloy,or having a laminated or plated structure such as a layer of iron-nickelalloy also has a layer or foil that includes copper attached on one orboth faces. Layer 110 has one or more layers of wiring 92 in or on it.In some embodiments, the external connections include a plurality ofsolder balls 193, arranged, for example, in a ball-grid array.

The reference number 90 refers generally to any chip that is attached tothe underside of substrate 120 and insulating layer 110, while numberssuch as 190, 290, 390, etc., refer to different embodiments whereincertain special features of the chip are described. The reference number93 refers generally to any external connector that is attached to theunderside of substrate 120 and insulating layer 110, while numbers suchas 193, 493, 593, etc., refer to different embodiments wherein certainspecial features of the connectors are described.

In some embodiments, insulating layer 110 includes a plurality ofinsulating sheets bonded to one another in a stack, with one level ofwiring layer 92 between each sheet. In some embodiments, one level ofwiring layer 92 is on the bottom surface of insulating layer 110 asshown. In some embodiments, a pad at one end of each wiring traceprovides a contact point for one of the solder balls 91 connecting tochip 90, and a larger pad at the opposite end and provides a contactpoint for one of the external connections 93.

A chip 90, having circuitry thereon such as a processor, memory, orother logic or analog circuit, is attached to wiring layer 92, forexample, by using solder balls 91. In some embodiments, chip 90 is athinned chip 190 as shown in FIG. 1, wherein the chip is thinned aftercircuitry is formed, for example, by chemical-mechanical polishing (CMP)or other suitable thinning method. In some embodiments, a thinned chipis needed due to the relatively small size of solder balls 193 used forconnectors 93, since if chip 90 is thicker than a diameter of solderballs 193 and is placed against a planar printed circuit motherboard,then the solder balls 193 would not reach the printed circuitmotherboard. Thus, in some embodiments, by providing a sufficientlythinned chip 190, the proper contact between the small solder balls 193and the printed circuit board is achieved. In other embodiments, thechip 90 is not thinned, but rather the solder balls 193 are made of asufficiently large diameter (i.e., larger than the thickness of chip 90)so that when mounted the solder balls reach to the PCB below them.

FIG. 2 is a perspective cut-away schematic view of a ball-side-diepackage 200. In this embodiment, a hole 299 is cut in printed circuitboard 94, in order that a relatively thick chip 290 (i.e., a chip 90that has a thickness about as large as, or larger than, the diameter ofsolder balls 293 used for connectors 93) can have a thickness thatextends into the hole 299, thus allowing connectors 93 to properlyattach to PCB 94. In some embodiments, heat dissipation through the holeis facilitated, e.g., for connection to a heat sink or for blown air.PCB 94 typically has a plurality of wiring traces 95 in a plurality oflayers in and on the PCB.

In some embodiments, a high-current-capable conductor 226 (such as abraided copper strap or other suitable conductor) is attached byconnector 227 (e.g., a bolt screwed into a tapped hole, or othersuitable connector) to substrate 120, and by connector 225 (e.g., also abolt screwed into a tapped hole, or other suitable connector). In someembodiments, conductor 226 carries some or all of the current for theground connection or for a power connection to chip 90. This is animportant optional function for high-current (e.g., 100 amps),low-voltage (e.g., 1 volt) power supplies used for high-frequency (e.g.,40 gigahertz) processors and other logic or analog circuitry. In someembodiments, an electrical connection is made through insulating layer110 for a plurality of connections from substrate 120 to solder balls 91and then to chip 90.

FIG. 3 is a perspective cut-away schematic view of a ball-side-diepackage 300 in an apparatus 380 having attached heat sinks 310 and 320.Apparatus 380 includes PCB 94, chip package 300, and one or more heatsinks 310 and/or 320. Also shown is a plurality of chips 90 including afirst chip 390 and a second chip 391. In some embodiments, upper heatsink 310 is attached to press against second face 122 of heat-conductingsubstrate 120 (optionally using heat-sink compound at the interface toimprove heat conduction), and a lower heat sink 320 is attached to pressagainst the back (lower face) of the one or more chips 90 (in this case,to chips 390 and 391, and optionally using heat-sink compound at theinterface to improve heat conduction). In some embodiments, one or moretightenable and/or spring-loaded through-board fasteners 330 (such asbolts 331 and nuts 332) are used to connect heat sinks 310 and 320 toone another and/or to PCB 94. In other embodiments, other suitablemethods and apparatus are used to hold the heat sink(s). Again, externalconnectors 93 (e.g., solder balls) attach wiring layer 92 to PCB 94.

FIG. 4 is a cut-away schematic view of an external-connector-side-diepackage 400 having a plurality of pins 493 used for connectors 93. Otherfeatures are as described in FIG. 1, such as chip 90 connected to wiringlayer 92 by solder balls 91 (a flip-chip configuration). Wiring layer 92is held by (i.e., in and/or on) insulating layer 110, which is bonded toheat-conducting substrate 120.

FIG. 5 is a cut-away schematic view of an apparatus 580 that includesexternal-connector-side-die package 500 having pads 593 used forexternal connectors 93. In the embodiment shown, PCB 94 includes aplurality of spring-loaded connectors 598, each of which contacts acorresponding pad 593. Other features are as described in FIG. 1, suchas chip 90 connected to wiring layer 92 by solder balls 91 (a flip-chipconfiguration). Wiring layer 92 is held by (i.e., in and/or on)insulating layer 110, which is bonded to heat-conducting substrate 120.

FIGS. 6, 7A, and 8A show cross section views of various embodiments ofthe substrate 120 used in FIGS. 1-5.

FIG. 6 is a cut-away schematic side view of a ball-side-die package 600having balls for external connectors 93. In this embodiment, substrate620 includes a sheet of core material 622 chosen to better match the CTEof chip 90, and at least one side of the core material 622 plated withor bonded to a layer (621 and/or 623) having high heat and/or electricalconductivity. In some embodiments, chip 90 is primarily silicon, andcore material 622 includes an iron-nickel alloy, for example, alloyshaving approximately 42% (weight) nickel (sometimes called N42 alloy) oralloys having approximately 36% (weight) nickel (such as invar alloy),or alloys having Kovar® (about 53% Fe, 29% Ni, 17% Co, 1% Other) inorder to match the CTE of the silicon chip 90. The CTE of silicon isabout 2.6 to 2.9 times 10⁻⁶ per degree C. at 293 degrees Kelvin. Themean coefficient of thermal expansion (CTE) of Invar from 20-100° C. isless than about 1.3×10⁻⁶° C.⁻¹. The mean CTE for Kovar® is about4.9×10⁻⁶° C.⁻¹. In some embodiments, an alloy (such as a nickel-ironalloy having Ni—Fe ratio between that of invar and that of N42) having aCTE that closely matches the CTE of chip 90 (e.g., of silicon), for theexpected operating temperature range, is chosen. In some embodiments, acopper foil (or other foil having high thermal and/or electricalconductivity) is bonded directly to the bottom and/or top of the core622, in order to keep the dimensional CTE properties of the core whileimproving the thermal and/or electrical properties of the compositesubstrate 620. In some embodiments, a plurality of copper plated-throughholes 650 are formed from the copper layer 621 through the insulatinglayer 110 to solder balls 91, in order to improve electricalconductivity for a power-supply connection, as well as to improvethermal conductivity. In some embodiments, further additional solderballs are provided for such contacts, wherein such solder balls are notelectrically connected, but are primarily to improve thermalconductivity from chip 90 to copper layer 621. In some embodiments, oneor more of copper plated-through holes 651 are formed from the copperlayer 621 through the insulating layer 110 to solder balls 93. In someembodiments, the top copper layer 623 is connected to the bottom copperlayer 621 by a copper layer plated or bonded along the entire peripheryof the package 600 substrate 620.

FIG. 7A is a cut-away schematic view of a ball-side-die package 700.Package 700 includes a substrate 720 having a core portion 722surrounded by a thin copper layer 724 on top and/or a thin copper layer723 on the bottom, as well as a solid copper peripheral skirt 721 to thesides. Core portion 722 is of a material chosen to provide an improvedCTE match to that of chip 90. The increased amount of copper, ascompared to package 600 of FIG. 6, increases the thermal conductivity,in some embodiments.

In some embodiments, the copper substrate starts as a large sheet (e.g.,about 200 mm by 300 mm), which is bonded to wiring layer 110, and thencut into individual packages (such as 100, 600, 700, or 800). In someembodiments, one or more chips 90 are attached to each package beforethe packages are cut apart. In other embodiments, the packages are cutapart before the chips are attached.

FIG. 7B is a top view of a sheet 701 to be cut into a plurality ofball-side-die packages 700. In this embodiment, a separate rectangularslug of core material 722 is embedded into copper sheet 701 for eachindividual package 700, and the cross section is as shown in FIG. 7A inboth the X and Y dimension.

FIG. 7C shows a top view of a sheet 702 to be cut into a plurality ofball-side-die packages 700′. In the embodiment shown, for each column ofpackages 700′, a stripe of core material 722 extends the length of sheet702, and thus each package 700′ has a stripe of core material extendingits length in one direction. The cross section in the X direction is asshown in FIG. 7A, but the core 722 in the Y direction extends the lengthof the package as shown in FIG. 6. This makes package 702 somewhateasier to make, but somewhat less thermally conductive.

FIG. 8A is a cut-away schematic view of a ball-side-die package 800.This package is identical to package 700 of FIG. 7, except that nocopper layer (such as 723 or 724) is provided at the top or bottom ofthe core 822, which is chosen to provide an improved CTE match to thatof chip 90. The increased amount of copper, as compared to package 600of FIG. 6, increases the thermal conductivity, in some embodiments.Omitting the top and bottom copper layers makes package 800 somewhateasier to make, but somewhat less thermally conductive as compared topackage 700 of FIG. 7A. In some embodiments, wiring layer 810 includes aplurality of wiring layers 892 and 893 that are separated from oneanother and from core 820 by insulating layers 811 and 812.

FIG. 8B is a top view of a sheet 801 to be cut into a plurality ofball-side-die packages 800. In this embodiment, a separate rectangularslug of core material 722 is embedded into copper sheet 701 (but notcovered by a copper top or bottom layer such as 723 or 724) for eachindividual package 700, and the cross section is as shown in FIG. 7A inboth the X and Y dimension.

FIG. 8C is a top view of a sheet 802 to be cut into a plurality ofball-side-die packages 800′. In the embodiment shown, for each column ofpackages 800′, a stripe of core material 822 extends the length of sheet802, and thus each package 800′ has a stripe of core material extendingits length in one direction. The cross section in the X direction is asshown in FIG. 8A, but the core 822 in the Y direction extends the lengthof the package and has a cross section as shown in FIG. 1. This makespackage 802 somewhat easier to make, but somewhat less thermallyconductive.

FIG. 9 is a schematic view of a system or machine 900 that performs amethod of some embodiments of the invention. The functions of the methodare performed in any suitable order, for example, in the order shown insome embodiments. Some embodiments of the invention include a method anda corresponding apparatus 900 for making electronics packages 100. Insome embodiments, the respective apparatus to perform the individualfunctions as single operation, while in other embodiments, a pluralityof smaller machines are used, each performing a sub-operation. In someembodiments, the various machines are connected by an automated conveyorsystem schematically represented by conveyor 901 that moves thein-process parts between the various stations. The method includesproviding (e.g., on conveyor 901) a thermally conductive metal core 120and providing (e.g., on conveyor 902) a first electronics chip 90.Apparatus 910 performs the function of covering a first face of themetal core 90 with a wiring layer 110 (see FIG. 1) having a plurality ofconductive traces (e.g., traces 892 and 893 of FIG. 8) separated fromthe metal core 120 by an insulating layer (e.g., 811 of FIG. 8), whereinthe wiring layer is substantially thinner than the metal core. Apparatus920 performs the function of forming and attaching solder balls 91and/or attaching a plurality of external conductors (e.g., solder balls)93 to the traces of the wiring layer on substrate 120. Apparatus 930performs the function of attaching the first chip 90 to the traces usinga first plurality of solder balls. In some embodiments, a plurality ofother chips 90 is also attached to the wiring layer. In someembodiments, apparatus 940 performs the function of cutting apart theindividual packages 100. In some embodiments, these individual packages100 are then tested by apparatus 950 and sorted (e.g., good devices frombad, and/or fast devices from slower) by apparatus 960.

One embodiment of the present invention includes an apparatus 100 thatincludes a thermally conductive metal core having a first major face anda second major face, and a wiring layer having an electricallyinsulating layer attached to the first face, and a plurality ofelectrically conductive traces separated from the metal core by theinsulating layer, wherein the metal core is substantially thicker thanthe wiring layer. The apparatus 100 also includes a first electronicschip attached to at least some of the plurality of traces byball-grid-array solder balls, and a plurality of external electricalconnectors attached to the traces; wherein the second face of the metalcore is exposed.

In some embodiments, the metal core has an effective coefficient ofthermal expansion (CTE) that matches a CTE of the chip better thansubstantially pure copper does in a region adjacent to the first chip.

In some embodiments, the metal core comprises a layer of an alloy thatincludes iron and nickel. In some such embodiments, the layer ofiron-nickel alloy has a layer that includes copper attached on thesecond face. In some such embodiments, the layer of iron-nickel alloyalso has a layer that includes copper attached on the first face.

In some embodiments, the layer of iron-nickel alloy has a lateral extentsubstantially smaller than a lateral extent of the metal core.

In some embodiments, the metal core is electrically connected to thefirst chip.

In some embodiments, the metal core is electrically connected to a powerconnection of the first chip.

Some embodiments further include a printed circuit board (PCB) having aplurality of conductive traces, wherein the plurality of externalelectrical connectors on the first face are electrically connected tothe plurality of conductive traces of the PCB, and a first heat sink inthermal contact with the exposed second face of the metal core.

In some such embodiments, the PCB has an opening opposite the firstchip, the opening being at least the size of the first chip. Some suchembodiments further include a second heat sink in thermal contact withthe first chip through the opening.

Some embodiments further include a second electronics chip attached toat least some of the plurality of traces by ball-grid-array solderballs.

In some embodiments, the metal core is about 800 microns thick and thewiring layer is about 40 microns thick.

In some embodiments, the external conductors include a plurality ofsolder balls, and wherein a thickness of the chip is thinned afterformation of electronic circuitry thereon such that the thickness of thechip is smaller than a diameter of the external-conductor solder balls.

Some embodiments of the invention include a method that includesproviding a thermally conductive metal core and a first electronicschip, covering a first face of the metal core with a wiring layer havinga plurality of conductive traces separated from the metal core by aninsulating layer, wherein the wiring layer is substantially thinner thanthe metal core, attaching the first chip to the traces using a firstplurality of solder balls, and attaching a plurality of externalconductors to the traces.

In some embodiments of the method, the plurality of external conductorsincludes a second plurality of solder balls, and wherein an averagediameter of the second plurality of solder balls is larger than anaverage diameter of the first plurality of solder balls.

Some embodiments further include providing a printed circuit board (PCB)having a plurality of conductive traces, electrically connecting theplurality of external electrical connectors on the first face to theplurality of conductive traces of the PCB, and thermally contacting afirst heat sink with an exposed second face of the metal core.

Some embodiments further include providing an opening in the PCB, andpositioning a thickness of the first chip into the opening.

Some embodiments further include electrically connecting the chip to themetal core.

In some embodiments, providing the metal core includes providing aneffective coefficient of thermal expansion substantially smaller thancopper at least in a region of the metal core adjacent to the firstchip.

In some embodiments, providing the metal core comprises providing alayer of an alloy that includes iron and nickel.

Some embodiments further include covering the layer of iron-nickel alloywith a layer that includes copper on the second face.

Some embodiments further include limiting a lateral extent of the layerof iron-nickel alloy to be substantially smaller than a lateral extentof the metal core.

Some embodiments of the invention include an apparatus that includes anelectronics chip 90, and means as described above attached to the chip90 for conducting heat to an attached heat dissipation device, whereinthe heat-conducting means includes means for better matching acoefficient of thermal expansion of the chip.

In some embodiments, the means for conducting heat includes means forbetter matching a coefficient of thermal expansion of the chip.

Some embodiments further include a first heat sink 310 (see FIG. 3) inthermal contact with the means for conducting heat. Some embodimentsfurther include a second heat sink 320 in thermal contact with the chip90 on a side of the means for conducting heat opposite the first heatsink.

It is understood that the above description is intended to beillustrative, and not restrictive. Many other embodiments will beapparent to those of skill in the art upon reviewing the abovedescription. The scope of the invention should be, therefore, determinedwith reference to the appended claims, along with the full scope ofequivalents to which such claims are entitled.

1. An apparatus comprising: an electronics chip; and means attached tothe chip for conducting heat to an attached heat dissipation device,wherein the heat-conducting means includes means for better matching acoefficient of thermal expansion of the chip.
 2. The apparatus of claim1 wherein the means for conducting heat includes means for bettermatching a coefficient of thermal expansion of the chip.
 3. Theapparatus of claim 1, further comprising a first heat sink in thermalcontact with the means for conducting heat.
 4. The apparatus of claim 3,further comprising a second heat sink in thermal contact with the chipon a side of the means for conducting heat opposite the first heat sink.5. An apparatus comprising: a first electronics chip a core comprising alayer of a material that has an effective coefficient of thermalexpansion (CTE) that matches a CTE of the chip better than substantiallypure copper does; and a wiring layer interposed between the chip and thecore, the wiring layer having an insulating layer and a plurality ofelectrically conductive traces separated from the core by the insulatinglayer, wherein the wiring layer is substantially thinner than the core,some traces of the plurality of electrically conductive traces attachedto the electronics chip and other traces of the plurality ofelectrically conductive traces to attach to external connectors;
 6. Theapparatus of claim 5, wherein the layer of material is an iron-nickelalloy.
 7. The apparatus of claim 6, wherein the layer of iron-nickelalloy also has a copper layer adjacent to the wiring layer.
 8. Theapparatus of claim 6, wherein the layer of iron-nickel alloy has alateral extent substantially less than a lateral extent of the core. 9.The apparatus of claim 5, further comprising: a printed circuit board(PCB) having a plurality of conductive traces to connect to the othertraces of the plurality of electrically conductive traces of the wiringlayer; and a heat sink in thermal contact with the core.
 10. Theapparatus of claim 9, further comprising a further heat sink in thermalcontact with the first chip through an opening in the PCB adjacent thechip.
 11. The apparatus of claim 5, wherein the core is about 800microns thick and the wiring layer is about 40 microns thick.